FDMC8032L datasheet, mosfet equivalent, On Semiconductor

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Features and benefits

* Max rDS(on) = 20 mW at VGS = 10 V, ID = 7 A
* Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6 A
* Low Inductance Packaging Shortens Rise/Fall Times
* Lower S.

Application

* Battery Protection
* Load Switching
* Point of Load MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise no.

Description

This device includes two 40 V N−Channel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for exceptional thermal performance. Features
* Max rDS(on) = 20 mW at VGS = 10 V, ID = 7 A
* Max rDS(on) = 27 mW at VGS = 4.

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